參數(shù)資料
型號(hào)： ZXMHC6A07T8(1)
文件頁數(shù)： 5/10頁
文件大小： 285K
代理商： ZXMHC6A07T8(1)
ZXMHC6A07T8
PROVISIONAL ISSUE E - MARCH 2004
5
S E M IC O N D U C T O R S
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
-60
V
I
D
=-250μA, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
=-250μA, V
DS
= V
GS
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
V
DS
=-15V,I
D
=-0.9A
Zero Gate Voltage Drain Current
-1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
-1.0
V
S
Static Drain-Source On-State Resistance
(1)
0.425
0.630
Forward Transconductance (1)(3)
g
fs
1.8
DYNAMIC
(3)
Input Capacitance
C
iss
C
oss
C
rss
233
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
17.4
pF
Reverse Transfer Capacitance
9.6
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
1.3
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
21.3
ns
Turn-Off Delay Time
5.3
ns
Fall Time
11.6
ns
Gate Charge
2.4
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
Total Gate Charge
Q
g
Q
gs
Q
gd
5.1
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
Gate-Source Charge
0.7
nC
Gate-Drain Charge
0.7
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
-0.85
-0.95
V
T
J
=25°C, I
S
=-0.8A,
V
GS
=0V
T
J
=25°C, I
F
=-0.9A,
di/dt= 100A/μs
Reverse Recovery Time (3)
t
rr
Q
rr
22.6
ns
Reverse Recovery Charge (3)
23.2
nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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