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參數資料
| 型號： | ZXMHC6A07T8(1) |
| 文件頁數： | 2/10頁 |
| 文件大小： | 285K |
| 代理商： | ZXMHC6A07T8(1) |
ZXMHC6A07T8
PROVISIONAL ISSUE E - MARCH 2004
2
S E M IC O N D U C T O R S
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)(d)
R
θ
J A
R
θ
J A
96
°C/W
J unction to Ambient (b)(d)
73
°C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t
≤
10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300 S pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
60
-60
V
Gate-Source Voltage
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C (b)(d)
@V
GS
=10V; T
A
=70 C (b)(d)
@V
GS
=10V; T
A
=25 C (a)(d)
Pulsed Drain Current (c)
1.8
1.4
1.6
-1.5
-1.2
-1.3
A
A
I
DM
I
S
I
S M
P
D
8.7
-7.5
A
Continuous Source Current (Body Diode) (b)
2.3
-2.1
A
Pulsed Source Current (Body Diode) (c)
8.7
-7.5
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
1.3
10.4
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
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相關代理商/技術參數 |
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| ZXMHC6A07T8TA | 功能描述:MOSFET 60V UMOS H-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMHC6A07T8TC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
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| ZXMHN6A07T8TC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:60V N-CHANNEL MOSFET H-BRIDGE |
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