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參數(shù)資料
| 型號： | XR1005 |
| 元件分類： | 上/下變頻器 |
| 英文描述： | RF/MICROWAVE DOWN CONVERTER |
| 封裝： | DIE-10 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 402K |
| 代理商： | XR1005 |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 7
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2
with Vd1=3.5V, Id1=130mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply
voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this
is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF)
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTFTable (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
FITs
E+
MTTF Hours
E+
Rth
C/W
Bias Conditions: Vd1=3.5V, Vd2=4.0V, Id1=130 mA, Id2=116 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Typical Application
Mimix Broadband MMIC-based 19.0-26.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26.0 GHz)
RF IN
21.2-23.6 GHz
IR Mixer
LNA
Coupler
XR1005
BPF
IF Out
2 GHz
LO(+2.0dBm)
9.6-10.8 GHz (USB Operation)
11.6-12.8 GHz (LSB Operation)
AGC Control
Mimix Broadband's 19.0-26.0 GHz XR1005 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes
up to 16 QAM. The receiver can be used in upper and lower sideband applications from 19.0-26.0 GHz.
May 2005 - Rev 13-May-05
19.0-26.0 GHz GaAs MMIC
Receiver
R1005
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| XR-1005CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog Filter |
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| XR1005-QD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1005-QD_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm |
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