- 您現(xiàn)在的位置：買賣IC網 > PDF目錄371347 > XP1601 Composite Device - Composite Transistors PDF資料下載
參數資料
| 型號： | XP1601 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 135K |
| 代理商： | XP1601 |
XP01601
2
SJJ00151BED
Tr2
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
0
160
40
120
80
0
250
100
200
50
150
T
T
Ambient temperature T
a
(
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
50
7
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.3
0.5
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
2.7
pF
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2
mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
1
00 mA, I
B
=
1
0 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
V
Collector-emitter voltage (Base open)
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
100
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
相關PDF資料 |
PDF描述 |
|---|---|
| XP01601(XP1601) | XP01601 (XP1601) - Composite Transistors |
| XP02210 | Composite Device - Composite Transistors |
| XP2210 | Composite Device - Composite Transistors |
| XP02211 | Composite Device - Composite Transistors |
| XP2211 | Composite Device - Composite Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XP161 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:N-Channel Power MOSFET |
| XP161A01A8PR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:N-Channel Power MOS FET |
| XP161A02A1PR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. |
| XP161A0390PR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOS FET |
| XP161A11A1PR | 功能描述:MOSFET N-CH 30V 4A SOT89 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復。