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參數(shù)資料
| 型號： | XP1601 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | XP1601 |
Composite Transistors
XP01601
(XP1601)
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
1
Publication date: February 2004
SJJ00151BED
For general amplification
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SB0709A (2SB709A)
+
2SD0601A (2SD601A)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 7S
Internal Connection
Tr2
Tr1
1
2
3
4
5
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
60
Unit
Tr1
Collector-base voltage
(Emitter open)
V
CBO
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
I
CP
V
CBO
100
200
60
mA
Peak collector current
mA
Tr2
Collector-base voltage
(Emitter open)
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
P
T
200
mA
Overall
Total power dissipation
150
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Unit: mm
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
2
±
0
0
+
–
0
±
0
0
1
±
0
1
3
2
0.20
±
0.05
(
1.3
±
0.1
2.0
±
0.1
5
4
(0.65) (0.65)
0
±
0
0.12
+0.05
5
10
相關(guān)PDF資料 |
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|---|---|
| XP01601(XP1601) | XP01601 (XP1601) - Composite Transistors |
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| XP2210 | Composite Device - Composite Transistors |
| XP02211 | Composite Device - Composite Transistors |
| XP2211 | Composite Device - Composite Transistors |
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