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參數(shù)資料
| 型號： | XP1554 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | XP1554 |
1
Publication date: February 2004
SJJ00148BED
Composite Transistors
XP01507
(XP1507)
Silicon NPN epitaxial planar type
For high breakdown voltage and low-noise amplification
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SC2631
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 4O
Tr2
Tr1
1
2
3
4
5
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
μ
A, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
=
5 V, I
C
=
10 mA
V
CE
=
5 V, I
C
=
10 mA
150
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector-base cutoff current (Emitter open)
I
CBO
h
FE
h
FE(Small/
1
μ
A
Forward current transfer ratio
h
FE
ratio
*
90
450
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
3
0 mA, I
B
=
3
mA
V
CB
=
10 V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
2.3
pF
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
2
±
0
0
+
–
0
±
0
0
1
±
0
1
3
2
0.20
±
0.05
(
1.3
±
0.1
2.0
±
0.1
5
4
(0.65) (0.65)
0
±
0
0.12
+0.05
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
150
V
Collector-emitter voltage (Base open)
V
CEO
150
V
Emitter-base voltage (Collector open)
V
CBO
I
C
5
V
Collector current
50
mA
Peak collector current
I
CP
100
mA
Total power dissipation
P
T
T
j
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
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|---|---|
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| XP01601 | Composite Device - Composite Transistors |
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