參數(shù)資料
型號: XP151A02BOMR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
中文描述: N溝道功率MOS場效應(yīng)管,低通態(tài)電阻和超高速開關(guān)特性。
文件頁數(shù): 3/4頁
文件大小: 54K
代理商: XP151A02BOMR
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Pulse Test
Drain/Source On-State Resistance vs. Ambient Temp.
Ambient Temperature:Topr (
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Ambient Temperature:Topr (
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Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Vds=10V, Id=1mA
XP151A02B0MR Characteristics
Drain/Source Voltage:Vds (V)
Drain Current vs. Drain /Source Voltage
Pulse Test, Ta=25
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Gate/Source Voltage:Vgs (V)
Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V
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Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
Pulse Test, Ta=25
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Drain Current:Id (A)
Drain/Source On-State Resistance vs. Drain Current
Pulse Test, Ta=25
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