參數(shù)資料
型號(hào): XP151A02BOMR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: N-Channel Power MOS FET with low on-state resistance and ultra High-Speed Switching Characteristics.
中文描述: N溝道功率MOS場(chǎng)效應(yīng)管,低通態(tài)電阻和超高速開關(guān)特性。
文件頁數(shù): 1/4頁
文件大?。?/td> 54K
代理商: XP151A02BOMR
u
3
1
2
3
D
1
G
2
S
N
N-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance: 0.2
MAX
N
Ultra High-Speed Switching
N
SOT-23 Package
I
Applications
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
I
General Description
The XP151A02B0MR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
I
Features
Low on-state resistance:
Rds(on)=0.2
(Vgs=4.5V)
Rds(on)=0.32
(Vgs=2.5V)
Ultra high-speed switching
Operational Voltage:
2.5V
High density mounting:
SOT-23
I
Absolute Maximum Ratings
I
Equivalent Circuit
I
Pin Configuration
N-Channel MOS FET
(1 device built-in)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
When implemented on a glass epoxy PCB
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
20
±
12
0.8
2.5
0.8
0.5
150
-55~150
V
V
A
A
A
W
:
:
SYMBOL
RATINGS
UNITS
I
Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
D
S
Gate
Drain
Source
SOT-23
(TOP VIEW)
Ta=25
:
Note:
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