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參數(shù)資料
| 型號： | XP133A1235SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOSFET |
| 中文描述： | 功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 484K |
| 代理商： | XP133A1235SR |
XP133A1235SR
1476
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Drain Cut-Off Current
Idss
Vds=20V, Vgs=0V
-
-
10
μ
A
Gate-Source Leak Current
Igss
Vgs=
±
12V, Vds=0V
-
-
±
1
μ
A
Gate-Source Cut-Off Voltage
Vgs(off)
Id=1mA, Vds=10V
0.5
-
1.2
V
Id=3A, Vgs=4.5V
-
0.026
0.035
Ω
Drain-Source On-State Resistance *
Rds(on)
Id=3A, Vgs=2.5V
-
0.035
0.048
Ω
Forward Transfer Admittance *
| Yfs |
Id=4A, Vds=10V
-
14
-
S
Body Drain Diode
Forward Voltage
Vf
If=6A, Vgs=0V
-
0.85
1.1
V
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal Resistance
(Channel-Ambience)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
-
62.5
-
℃
/W
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Input Capacitance
Ciss
-
760
-
pF
Output Capacitance
Coss
-
430
-
pF
Feedback Capacitance
Crss
Vds=10V, Vgs=0V
f=1MHz
-
200
-
pF
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Turn-On Delay Time
td (on)
-
10
-
ns
Rise Time
tr
-
20
-
ns
Turn-Off Delay Time
td (off)
-
55
-
ns
Fall Time
tf
Vgs=5V, Id=3A
Vdd=10V
-
15
-
ns
■
ELECTRICAL CHARACTERISTICS
DC Characteristics
T
a = 25
℃
* Effective during pulse test.
T
a = 25
℃
Switching Characteristics
Thermal Characteristics
Dynamic Characteristics
T
a = 25
℃
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