參數(shù)資料
型號： XN5553
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Silicon NPN epitaxial planer transistor
中文描述： 20 mA, 100 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 34K
代理商： XN5553
1
Composite Transistors
XN5553
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SD1149
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Collector (Tr1)
2 : Emitter (Tr2)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
4U
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
100
V
Collector to emitter voltage
100
V
Emitter to base voltage
15
V
Collector current
20
mA
Peak collector current
50
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
100
V
Collector to emitter voltage
100
V
Emitter to base voltage
15
V
Collector cutoff current
0.1
μ
A
μ
A
1.0
Forward current transfer ratio
400
2000
Collector to emitter saturation voltage
0.05
0.2
V
Noise voltage
NV
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100K
, Function = FLAT
80
mV
Transition frequency
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
MHz
2.8
+0.2
–0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
6
5
4
3
2
1
±
0
0
0
1
±
0
+0.25
0
+
–
0
+
–
2
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
0.1 to 0.3
6
1
2
Tr2
Tr1
5
4
3
Unit: mm
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