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參數(shù)資料
| 型號： | XN1601 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | XN1601 |
XN01601
4
SJJ00033BED
Characteristics charts of Tr2
NF
I
E
h parameter
I
E
h parameter
V
CE
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
0
10
1
20
2
18
4
6
8
10
12
14
16
N
Emitter current I
E
(mA)
1
10
V
CB
=
5 V
R
g
=
50 k
T
a
=
25
°
C
f
=
100 Hz
10 kHz
1 kHz
1
10
1
10
10
2
h
Emitter current I
E
(mA)
1
10
V
CE
=
5 V
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
4
)
h
Collector-emitter voltage V
CE
(V)
1
10
1
10
10
2
1
10
I
E
=
2 mA
f
=
270 Hz
T
a
=
25
°
C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
4
)
0
0
10
2
4
8
6
60
50
40
30
20
10
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
20
μ
A
0
0
1
000
800
600
400
200
Base current I
B
(
μ
A)
240
200
160
120
80
40
C
C
V
CE
=
10 V
T
a
=
25
°
C
0
0
1.0
0.8
0.6
0.4
0.2
1
200
1
000
800
600
400
200
Base-emitter voltage V
BE
(V)
B
B
μ
A
V
CE
=
10 V
T
a
=
25
°
C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base-emitter voltage V
BE
(V)
C
C
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
10
1
600
500
400
300
200
100
F
F
Collector current I
C
(mA)
1
10
10
2
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
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