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參數(shù)資料
| 型號： | XN1601 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復(fù)合設(shè)備-復(fù)合晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | XN1601 |
Composite Transistors
XN01601
(XN1601)
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
1
Publication date: February 2004
SJJ00033BED
For general amplification
■
Features
Two elements incorporated into one package
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SB0709A (2SB709A)
+
2SD0601A (2SD601A)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 7S
Internal Connection
2
Tr1
Tr2
4
1
5
3
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
60
Unit
Tr1
Collector-base voltage
(Emitter open)
V
CBO
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
I
CP
V
CBO
100
200
60
mA
Peak collector current
mA
Tr2
Collector-base voltage
(Emitter open)
V
Collector-emitter voltage
(Base open)
V
CEO
50
V
Emitter-base voltage
(Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
P
T
200
mA
Overall
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Unit: mm
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
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