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參數(shù)資料
| 型號(hào)： | XN1507 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 50 mA, 150 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI PACKAGE-5 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 40K |
| 代理商： | XN1507 |
1
Composite Transistors
XN1507
Silicon NPN epitaxial planer transistor
For high break down voltage and low noise amplification
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SD814
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
4O
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
150
V
Collector to emitter voltage
150
V
Emitter to base voltage
5
V
Collector current
50
mA
Peak collector current
100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
V
EBO
I
CBO
h
FE
I
C
= 100
μ
A, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
V
Emitter to base voltage
5
V
Collector cutoff current
1
μ
A
Forward current transfer ratio
90
450
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
0.5
0.99
Collector to emitter saturation voltage
1
V
Transition frequency
150
MHz
Collector output capacitance
2.3
pF
*1
Ratio between 2 elements
5
1
Tr2
Tr1
4
3
2
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