- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375037 > XN1531 (PANASONIC CORP) Silicon NPN epitaxial planer transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | XN1531 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 2 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINI5-G1, SC-74A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | XN1531 |
1
Composite Transistors
XN1531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC3130
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
9F
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
3
V
Collector current
50
mA
Total power dissipation
200
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.8
+0.2
-
0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
5
4
3
2
1
±
0
0
0
1
±
0
0
+0.25
-
0.05
0
+
-
0
0
0
+
-
0
2
+
-
0
1
+
-
0
0.4
±
0.2
0.1 to 0.3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 100
μ
A
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= –5mA, f = 30MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
10
V
Emitter to base voltage
3
V
Collector cutoff current
1
μ
A
μ
A
10
Forward current transfer ratio
75
200
400
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
0.5
0.99
h
FE2
/h
FE1
ratio
h
FE2
/h
FE1
0.75
1.6
Collector to emitter saturation voltage
V
CE(sat)
C
ob
f
T
r
bb
'·C
C
C
rb
0.5
V
Collector output capacitance
0.9
1.1
pF
Transition frequency
1.4
1.9
2.5
GHz
Collector to base parameter
11.8
13.5
ps
Common base reverse transfer capacitance
0.25
0.35
pF
*1
Ratio between 2 elements
5
1
Tr2
Tr1
4
3
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XN1601 | Silicon PNP(NPN) epitaxial planer transistor |
| XN1871 | Silicon N-channel junction FET |
| XN1872 | Silicon N-channel . Enhancement MOS FET |
| XN1A312 | Silicon NPN(PNP) epitaxial planer transistor |
| XN1B301 | Silicon PNP(NPN) epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN1601 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) |
| XN1713 | 制造商:OHIO BUCKEYE 功能描述: |
| XN1871 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon N-channel junction FET |
| XN1872 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon n-channel enhancement MOSFET |
| XN1A311 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Composite Transistors |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。