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參數(shù)資料
| 型號： | XCV812E-7BG560C |
| 廠商： | Xilinx Inc |
| 文件頁數(shù)： | 72/118頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC FPGA 1.8V C-TEMP 560-MBGA |
| 產(chǎn)品變化通告： | FPGA Family Discontinuation 18/Apr/2011 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | Virtex®-E EM |
| LAB/CLB數(shù)： | 4704 |
| 邏輯元件/單元數(shù)： | 21168 |
| RAM 位總計： | 1146880 |
| 輸入/輸出數(shù)： | 404 |
| 門數(shù)： | 254016 |
| 電源電壓： | 1.71 V ~ 1.89 V |
| 安裝類型： | 表面貼裝 |
| 工作溫度： | 0°C ~ 85°C |
| 封裝/外殼： | 560-LBGA，金屬 |
| 供應(yīng)商設(shè)備封裝： | 560-MBGA（42.5x42.5） |
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DS025-3 (v3.0) March 21, 2014
Module 3 of 4
1
2000-2014 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm.
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.
— OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE —
Virtex-E Extended Memory Electrical Characteristics
Definition of Terms
Electrical and switching characteristics are specified on a
per-speed-grade basis and can be designated as Advance,
Preliminary, or Production. Each designation is defined as
follows:
Advance: These speed files are based on simulations only
and are typically available soon after device design specifi-
cations are frozen. Although speed grades with this desig-
nation are considered relatively stable and conservative,
some under-reporting might still occur.
Preliminary: These speed files are based on complete ES
(engineering sample) silicon characterization. Devices and
speed grades with this designation are intended to give a
better indication of the expected performance of production
silicon. The probability of under-reporting delays is greatly
reduced as compared to Advance data.
Production: These speed files are released once enough
production silicon of a particular device family member has
been characterized to provide full correlation between
speed files and devices over numerous production lots.
There is no under-reporting of delays, and customers
receive formal notification of any subsequent changes. Typ-
ically, the slowest speed grades transition to Production
before faster speed grades.
All specifications are representative of worst-case supply
voltage and junction temperature conditions. The parame-
ters included are common to popular designs and typical
applications. Contact the factory for design considerations
requiring more detailed information.
Table 1 correlates the current status of each Virtex-E
Extended Memory device with a corresponding speed file
designation.
All specifications are subject to change without notice.
DC Characteristics
Absolute Maximum Ratings
0
Virtex-E 1.8 V Extended Memory
Field Programmable Gate Arrays
DS025-3 (v3.0) March 21, 2014
00
Production Product Specification
R
Table 1: Virtex-E Extended Memory Device
Speed Grade Designations
Device
Speed Grade Designations
Advance
Preliminary
Production
XCV405E
–8, –7, –6
XCV812E
–8, –7, –6
Symbol
Description(1)
Units
VCCINT
Internal Supply voltage relative to GND
–0.5 to 2.0
V
VCCO
Supply voltage relative to GND
–0.5 to 4.0
V
VREF
Input Reference Voltage
–0.5 to 4.0
V
VIN (3)
Input voltage relative to GND
–0.5 to VCCO +0.5
V
VTS
Voltage applied to 3-state output
–0.5 to 4.0
V
VCC
Longest Supply Voltage Rise Time from 0 V – 1.71 V
50
ms
TSTG
Storage temperature (ambient)
–65 to +150
°C
TJ
Junction temperature (2)
Plastic packages
+125
°C
Notes:
1.
Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time can affect device reliability.
2.
For soldering guidelines and thermal considerations, see the device packaging information on www.xilinx.com.
3.
Inputs configured as PCI are fully PCI compliant. This statement takes precedence over any specification that would imply that the
device is not PCI compliant.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XCV812E-7BG560I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG676C | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG676I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG900C | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-7BG900I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
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