參數(shù)資料
型號(hào)： XC164SM
廠商： INFINEON TECHNOLOGIES AG
英文描述： 16-Bit Single-Chip Microcontroller with C166SV2 Core
中文描述： 16位單片機(jī)與C166SV2核心
文件頁(yè)數(shù)： 52/66頁(yè)
文件大?。?/td> 599K
代理商： XC164SM
XC164SM
Derivatives
Electrical Parameters
Data Sheet
50
V1.0, 2005-11
Table 4-5
Parameter
Power Consumption XC164SM
(Operating Conditions apply)
Sym-
bol
Min.
Power supply current (active)
with all peripherals active
Pad supply current
I
DDP
Idle mode supply current with
all peripherals active
Sleep and Power down mode
supply current caused by
leakage
4)
Limit Values
Max.
10 +
2.6
×
f
CPU
5
10 +
1.2
×
f
CPU
128,000
×
e
-
α
Unit Test Condition
I
DDI
–
mA
f
CPU
in [MHz]
1)2)
1) During Flash programming or erase operations the supply current is increased by max. 5 mA.
2) The supply current is a function of the operating frequency. This dependency is illustrated in
Figure 4-1
.
These parameters are tested at
V
DDImax
and maximum CPU clock frequency with all outputs disconnected and
all inputs at
V
IL
or
V
IH
.
3) The pad supply voltage pins (
V
DDP
) mainly provides the current consumed by the pin output drivers. A small
amount of current is consumed even though no outputs are driven, because the drivers’ input stages are
switched and also the Flash module draws some power from the
V
DDP
supply.
4) The total supply current in Sleep and Power down mode is the sum of the temperature dependent leakage
current and the frequency dependent current for RTC and main oscillator.
5) This parameter is determined mainly by the transistor leakage currents. This current heavily depends on the
junction temperature (see
Figure 4-3
). The junction temperature
T
J
is the same as the ambient temperature
T
A
if no current flows through the port output drivers. Otherwise, the resulting temperature difference must be
taken into account.
6) All inputs (including pins configured as inputs) at 0 V to 0.1 V or at
V
DDP
- 0.1 V to
V
DDP
, all outputs (including
pins configured as outputs) disconnected. This parameter is tested at 25
°
C and is valid for
T
J
≥
25
°
C.
7) This parameter is determined mainly by the current consumed by the oscillator switched to low gain mode (see
Figure 4-2
). This current, however, is influenced by the external oscillator circuitry (crystal, capacitors). The
given values refer to a typical circuitry and may change in case of a not optimized external oscillator circuitry.
–
–
mA
mA
3)
I
IDX
f
CPU
in [MHz]
2)
I
PDL
5)
–
mA
V
DDI
=
V
DDImax
T
J
in [
°
C]
α
=
4670 / (273 +
T
J
)
V
DDI
=
V
DDImax
f
OSC
in [MHz]
6)
Sleep and Power down mode
supply current caused by
leakage and the RTC running,
clocked by the main oscillator
4)
I
PDM
7)
–
0.6 +
0.02
×
f
OSC
+
I
PDL
mA
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