參數(shù)資料
型號: XA2C64A-8VQG44Q
廠商: Xilinx Inc
文件頁數(shù): 10/16頁
文件大?。?/td> 0K
描述: IC CPLD 64MCELL 33 I/O 44-VQFP
產(chǎn)品培訓(xùn)模塊: CoolRunner-II CPLD Starter Kit
標(biāo)準(zhǔn)包裝: 160
系列: CoolRunner II
可編程類型: 系統(tǒng)內(nèi)可編程
最大延遲時間 tpd(1): 6.7ns
電壓電源 - 內(nèi)部: 1.7 V ~ 1.9 V
邏輯元件/邏輯塊數(shù)目: 4
宏單元數(shù): 64
門數(shù): 1500
輸入/輸出數(shù): 33
工作溫度: -40°C ~ 105°C
安裝類型: 表面貼裝
封裝/外殼: 44-TQFP
供應(yīng)商設(shè)備封裝: 44-VQFP(10x10)
包裝: 托盤
XA2C64A CoolRunner-II Automotive CPLD
DS553 (v1.1) May 5, 2007
3
Product Specification
R
Recommended Operating Conditions
DC Electrical Characteristics (Over Recommended Operating Conditions)
Absolute Maximum Ratings
Symbol
Description
Value
Units
VCC
Supply voltage relative to ground
–0.5 to 2.0
V
VCCIO
Supply voltage for output drivers
–0.5 to 4.0
V
VJTAG(2)
JTAG input voltage limits
–0.5 to 4.0
V
VCCAUX
JTAG input supply voltage
–0.5 to 4.0
V
VIN(1)
Input voltage relative to ground(1)
–0.5 to 4.0
V
VTS(1)
Voltage applied to 3-state output(1)
–0.5 to 4.0
V
VSTG(3)
Storage Temperature (ambient)
–65 to +150
°C
TJ
Junction Temperature
+125
°C
Notes:
1.
Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA, whichever is easiest to achieve. During transitions,
the device pins may undershoot to –2.0v or overshoot to +4.5V, provided this over or undershoot lasts less than 10 ns and with the
forcing current being limited to 200 mA.
2.
Valid over commercial temperature range.
3.
For soldering guidelines and thermal considerations, see the Device Packaging information on the Xilinx website. For Pb free
packages, see XAPP427.
Symbol
Parameter
Min
Max
Units
VCC
Supply voltage for internal logic
and input buffers
Industrial TA = –40°C to +85°C
1.7
1.9
V
Q-Grade TA = -40° C to +105° C
TJ Maximum = +125° C
1.7
1.9
V
VCCIO
Supply voltage for output drivers @ 3.3V operation
3.0
3.6
V
Supply voltage for output drivers @ 2.5V operation
2.3
2.7
V
Supply voltage for output drivers @ 1.8V operation
1.7
1.9
V
Supply voltage for output drivers @ 1.5V operation
1.4
1.6
V
VCCAUX
JTAG programming pins
1.7
3.6
V
Symbol
Parameter
Test Conditions
Typical
Max.
Units
ICCSB
Standby current Industrial
VCC = 1.9V, VCCIO = 3.6V
43
165
μA
ICCSB
Standby current Q-grade
VCC = 1.9V, VCCIO = 3.6V
43
700
μA
ICC(1)
Dynamic current
f = 1 MHz
-
1.50
mA
f = 50 MHz
-
7
mA
CJTAG
JTAG input capacitance
f = 1 MHz
-
10
pF
CCLK
Global clock input capacitance
f = 1 MHz
-
12
pF
CIO
I/O capacitance
f = 1 MHz
-
10
pF
IIL(2)
Input leakage current
VIN = 0V or VCCIO to 3.9V
-
+/–10
μA
IIH(2)
I/O High-Z leakage
VIN = 0V or VCCIO to 3.9V
-
+/–10
μA
Notes:
1.
16-bit up/down, Resetable binary counter (one counter per function block) tested at
VCC=VCCIO= 1.9V.
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