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參數(shù)資料
| 型號： | X3N172-73 |
| 廠商： | CALOGIC LLC |
| 英文描述： | Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
| 中文描述： | 二極管保護P溝道增強型MOS管通用放大器/開關 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | X3N172-73 |
3N172 /3N173
C ORPORATION
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C and Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
3N172
MIN MAX MIN MAX
3N173
UNITS
TEST CONDITIONS
| y
fs
|
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Forward Transadmittance*
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Output Admittance*
Small-Signal, Common-Source, Short-Circuit,
Input Capacitance*
Small-Signal, Common-Source, Short-Circuit,
Reverse Transfer Capacitance*
Small-Signal, Common-Source, Short-Circuit,
Output Capacitance*
1500 4000 1000 4000
μ
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
| y
os
|
250
250
μ
S
V
DS
= -15V, I
D
= -10mA, f = 1kHz
C
iss
3.5
3.5
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
C
rss
1.0
1.0
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
C
oss
3.0
3.0
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
NF
Common-Source Spot Noise Figure
1.0
dB
V
DS
= -15V, I
D
= -1mA, f = 1kHz, R
G
= 1M
SWITCHING CHARACTERISTICS
T
A
= 25
o
C Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
t
d (on)
Turn-On Delay Time*
12
12
ns
V
DD
= -15V, I
D (on)
= -10mA
t
r
Rise Time*
24
24
R
G
= R
L
= 1.4k
t
off
Turn-Off Delay Time*
50
50
See Test Circuit Below
*Registered JEDEC Data
SWITCHING TIME DETAIL
-0V
-1V
-15V
10%
50%
50%
90%
90%
10%
PULSE
WIDTH
90%
0210
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH
t
< 0.2ns
C
R
> 10M
INPUT PULSE
t
< 2ns
PULSE WIDTH
rise
rise
in
in
V
IN
V
OUT
4(on)
t
r
t
off
t
IN
-V
> 200ns
< 2.0pF
0220
D.U.T.
V
DD
R
L
V
OUT
R
G
50
V
IN
-0.1
-0.5
-1.0
-5.0
-10
S
SWITCHING TIMES vs. ON-STATE
DRAIN CURRENT
ON-STATE DRAIN CURRENT - (I
D(on)
) - mA
t
d(on)
rise
t
off
G
= R
L
= 1.4K
R
V
DD
= 15V
0230
1000
500
1.0
t
5.0
100
50
10
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