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參數(shù)資料
| 型號： | X3N172-73 |
| 廠商： | CALOGIC LLC |
| 英文描述： | Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
| 中文描述： | 二極管保護P溝道增強型MOS管通用放大器/開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | X3N172-73 |
Diode ProtectedP-Channel
Enhancement Mode MOSFET
General Purpose Ampifier/Swtch
3N172 /3N173
FEATURES
High Input Impedance
Diode Protected Gate
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
μ
A
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N172-73
X3N172-73
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
TO-72
G
D
S
C,B
1503Z
DEVICE SCHEMATIC
1
2
0200
3
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N172
3N173
UNITS
TEST CONDITIONS
MIN
MAX
-200
MIN
MAX
-500
I
GSS
Gate Reverse Current
pA
V
GS
= -20V
-0.5
-1.0
μ
A
T
A
= +125
o
C
BV
GSS
Gate Breakdown Voltage
-40
-125
-30
-125
V
I
D
= -10
μ
A
I
D
= -10
μ
A
I
S
= -10
μ
A, V
DB
= 0
V
DS
= V
GS
, I
D
= -10
μ
A
V
DS
= -15V, I
D
= -10
μ
A
V
DS
= -15V, I
D
= -500
μ
A
BV
DSS
Drain-Source Breakdown Voltage
-40
-30
BV
SDS
Source-Drain Breakdown Voltage
-40
-30
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
-2.0
-5.0
-2.0
-5.0
V
GS
Gate Source Voltage
-3.0
-6.5
-2.5
-6.5
I
DSS
Zero Gate Voltage Drain Current
-0.4
-10
nA
V
DS
= -15V, V
GS
= 0
I
SDS
Zero Gate Voltage Source Current
-0.4
-10
V
SD
= -15V, V
DB
= 0, V
GD
= 0
V
GS
= -20V, I
D
= -100
μ
A
r
DS(on)
Drain Source On Resistance
250
350
ohms
I
D(on)
On Drain Current
-5.0
-30
-5.0
-30
mA
V
DS
= -15V, V
GS
= -10V
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