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參數(shù)資料
| 型號(hào)： | X3N170-71 |
| 廠商： | CALOGIC LLC |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | X3N170-71 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified) Substrate connected to source.
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
BV
DSS
Drain-Source Breakdown Voltage
25
V
I
D
= 10
μ
A, V
GS
= 0
I
GSS
Gate Leakage Current
±
10
pA
V
GS
=
±
35V, V
DS
= 0
100
V
GS
= 35V, V
DS
= 0, T
A
= 125
o
C
I
DSS
Zero-Gate-Voltage Drain Current
10
nA
V
DS
= 10V, V
GS
= 0
1.0
μ
A
T
A
= 125
o
C
V
GS(th)
Gate-Source Threshold Voltage
3N170
1.0
2.0
V
V
DS
= 10V, I
D
= 10
μ
A
3N171
1.5
3.0
I
D(on)
"ON" Drain Current
10
mA
V
GS
= 10V, V
DS
= 10V
V
DS(on)
Drain-Source "ON" Voltage
2.0
V
I
D
= 10mA, V
GS
= 10V
r
ds(on)
Drain-Source ON Resistance
200
V
GS
= 10V, I
D
= 0, f = 1kHz
| Y
fs
|
Forward Transfer Admittance
1000
μ
S
V
DS
= 10V, I
D
= 2.0mA, f = 1kHz
C
rss
Reverse Transfer Capacitance (Note 1)
1.3
pF
V
DS
= 0, V
GS
= 0, f = 1MHz
C
iss
Input Capacitance (Note 1)
5.0
V
DS
= 10V, V
GS
= 0, f = 1MHz
C
d(sub)
Drain-Substrate Capacitance (Note 1)
5.0
V
D(SUB)
= 10V, f = 1MHz
t
d(on)
Turn-On Delay Time (Note 1)
3.0
ns
VDD = 10V, I
D(on)
= 10mA,
V
GS(on)
= 10V, V
GS(off)
= 0,
R
G
= 50
t
r
Rise Time (Note 1)
10
t
d(off)
Turn-Off Delay Time (Note 1)
3.0
t
f
Fall Time (Note 1)
15
NOTE 1:
For design reference only, not 100% tested.
3N170 /3N171
C ORPORATION
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