參數(shù)資料
型號(hào): WS57C128FB-55CMB
元件分類: PROM
英文描述: 16K X 8 UVPROM, 55 ns, CQCC32
封裝: CERAMIC, LCC-32
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 49K
代理商: WS57C128FB-55CMB
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
tAS
Address Setup Time
2
s
tCES
Chip Enable Setup Time
2
s
tOES
Output Enable Setup Time
2
s
tOS
Data Setup Time
2
s
tAH
Address Hold Time
0
s
tOH
Data Hold Time
2
s
tDF
Chip Disable to Output Float Delay
0
130
ns
tOE
Data Valid From Output Enable
130
ns
tVS
VPP Setup Time
2
s
tPW
PGM Pulse Width
100
200
s
WS57C128FB
3-10
PROGRAMMING INFORMATION
DC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI
Input Leakage Current
–10
10
A
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
60
mA
Programming Pulse (CE = PGM = VIL)
ICC
VCC Supply Current
30
mA
VOL
Output Low Voltage During Verify
0.4
V
(IOL = 16 mA)
VOH
Output High Voltage During Verify
2.4
V
(IOH = –4 mA)
NOTE:
9. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
10. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to
12.5 volts or vice-versa.
11. During power up the PGM pin must be brought high (
≥ V
IH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS (T
A = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
PROGRAMMING WAVEFORM
ADDRESS STABLE
ADDRESSES
VPP
VCC
PGM
DATA
tAS
tPW
tOS
tOH
tOE
tAH
tDF
tVS
tCES
tOES
DATA OUT
DATA IN STABLE
OE
VIH
VIL
VIH
VIL
VALID
HIGH Z
CE
VIH
VIL
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