參數(shù)資料
型號: W986432DH-8
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
封裝: 0.400 INCH, 0.50 MM PITCH, TSOP2-86
文件頁數(shù): 6/10頁
文件大?。?/td> 77K
代理商: W986432DH-8
W986432DH
Publication Release Date: May 2000
- 5 -
Revision A0
DC CHARACTERISTICS
Absolute Maximum Rating
PARAMETER
SYM.
RATING
UNIT
NOTES
Input, Column Output Voltage
VIN, VOUT
-0.3
VCC +0.3
V
1
Power Supply Voltage
VCC, VCCQ
-0.3
4.6
V
1
Operating Temperature
TOPR
0
70
°
C
1
Storage Temperature
TSTG
-55
150
°
C
1
Soldering Temperature (10s)
TSOLDER
260
°
C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to 70°C)
PARAMETER
SYM.
MIN.
TYP.
MAX.
UNIT
NOTE
S
Power Supply Voltage
VCC
3.0
3.3
3.6
V
2
Power Supply Voltage (for I/O
Buffer)
VCCQ
3.0
3.3
3.6
V
2
Input High Voltage
VIH
2.0
-
VCC +0.3
V
2
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Note: VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS
VIL (min.) = VSS/VSSQ-1.2V for pulse width < 5 nS
CAPACITANCE
(VDD = 3.3V, TA = 25
°C, f = 1 MHz)
PARAMETER
SYM.
MIN.
MAX.
UNIT
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM, CKE)
Ci
2.5
4
pf
Input Capacitance (CLK)
CCLK
2.5
4
pf
Input/Output capacitance (DQ0
DQ31)
Co
4
6.5
pf
Note: These parameters are periodically sampled and not 100% tested
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