參數(shù)資料
型號(hào)： W9425G6JB-5
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： DDR DRAM, PBGA60
封裝： 8 X 13 MM, ROHS COMPLIANT, TFBGA-60
文件頁(yè)數(shù)： 12/50頁(yè)
文件大?。?/td> 852K
代理商： W9425G6JB-5
W9425G6JB
Publication Release Date: Oct. 08, 2010
- 2 -
Revision A01
7.10.1 Burst Length field (A2 to A0) .................................................................................. 14
7.10.2 Addressing Mode Select (A3)................................................................................. 15
7.10.3 CAS Latency field (A6 to A4).................................................................................. 16
7.10.4 DLL Reset bit (A8) .................................................................................................. 16
7.10.5 Mode Register /Extended Mode register change bits (BA0, BA1) ......................... 16
7.10.6 Extended Mode Register field ................................................................................ 16
7.10.7 Reserved field......................................................................................................... 16
8.
OPERATION MODE .................................................................................................................... 17
8.1
Simplified Truth Table........................................................................................................ 17
8.2
Function Truth Table ......................................................................................................... 18
8.3
Function Truth Table for CKE............................................................................................ 21
8.4
Simplified Stated Diagram ................................................................................................. 22
9.
ELECTRICAL CHARACTERISTICS ............................................................................................ 23
9.1
Absolute Maximum Ratings............................................................................................... 23
9.2
Recommended DC Operating Conditions ......................................................................... 23
9.3
Capacitance....................................................................................................................... 24
9.4
Leakage and Output Buffer Characteristics ...................................................................... 24
9.5
DC Characteristics............................................................................................................. 25
9.6
AC Characteristics and Operating Condition..................................................................... 26
9.7
AC Test Conditions............................................................................................................ 27
10. SYSTEM CHARACTERISTICS FOR DDR SDRAM .................................................................... 29
10.1 Table 1: Input Slew Rate for DQ, DQS, and DM............................................................... 29
10.2 Table 2: Input Setup & Hold Time Derating for Slew Rate................................................ 29
10.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate.................................... 29
10.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate .................... 29
10.5 Table 5: Output Slew Rate Characteristics (X16 Devices only) ........................................ 29
10.6 System Notes: ................................................................................................................... 30
11. TIMING WAVEFORMS ................................................................................................................ 32
11.1 Command Input Timing ..................................................................................................... 32
11.2 Timing of the CLK Signals ................................................................................................. 32
11.3 Read Timing (Burst Length = 4) ........................................................................................ 33
11.4 Write Timing (Burst Length = 4) ........................................................................................ 34
11.5 DM, DATA MASK (W9425G6JB) ...................................................................................... 35
11.6 Mode Register Set (MRS) Timing ..................................................................................... 36
11.7 Extend Mode Register Set (EMRS) Timing....................................................................... 37
11.8 Auto-precharge Timing (Read Cycle, CL = 2) ................................................................... 38
11.9 Auto-precharge Timing (Read cycle, CL = 2), continued .................................................. 39
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9425G6JB-5 TR 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ
W9425G6JB-5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W9425G6JB-5I TR 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN
W9425G6JH 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM
W9425G6JH-4 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256MB DDR,250MHZ,2.5V , TSOP 66PIN GREEN
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