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參數(shù)資料
| 型號： | W9412G2IB-4 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 4M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件頁數(shù)： | 20/50頁 |
| 文件大?。?/td> | 826K |
| 代理商： | W9412G2IB-4 |
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W9412G2IB
Publication Release Date: Aug. 30, 2010
- 27 -
Revision A06
9.5 DC Characteristics
MAX.
SYM.
PARAMETER
-4
-5/-5I
-6/-6I
UNIT NOTES
IDD0
Operating current: One Bank Active-Precharge; tRC = tRC min;
tCK = tCK min; DQ, DM and DQS inputs changing twice per
clock cycle; Address and control inputs changing once per
clock cycle
160
150
140
mA
7
IDD1
Operating current: One Bank Active-Read-Precharge; Burst =
2; tRC = tRC min; CL = 3; tCK = tCK min; IOUT = 0 mA; Address
and control inputs changing once per clock cycle.
180
170
160
mA
7, 9
IDD2P
Precharge Power Down standby current: All Banks Idle; Power
down mode; CKE < VIL max; tCK = tCK min; Vin = VREF for DQ,
DQS and DM
30
mA
IDD2N
Idle standby current: CS > VIH min; All Banks Idle; CKE > VIH
min; tCK = tCK min; Address and other control inputs changing
once per clock cycle; Vin > VIH min or Vin < VIL max for DQ,
DQS and DM
45
mA
7
IDD3P
Active Power Down standby current: One Bank Active; Power
down mode; CKE < VIL max; tCK = tCK min
30
mA
IDD3N
Active standby current: CS > VIH min; CKE > VIH min; One
Bank Active-Precharge; tRC = tRAS max; tCK = tCK min; DQ, DM
and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
60
mA
7
IDD4R
Operating current: Burst = 2; Reads; Continuous burst; One
Bank Active; Address and control inputs changing once per
clock cycle; CL=3; tCK = tCK min; IOUT = 0mA
240
220
200
mA
7, 9
IDD4W
Operating current: Burst = 2; Write; Continuous burst; One
Bank Active; Address and control inputs changing once per
clock cycle; CL = 3; tCK = tCK min; DQ, DM and DQS inputs
changing twice per clock cycle
270
250
230
mA
7
IDD5
Auto Refresh current: tRC = tRFC min
210
200
190
mA
7
IDD6
Self Refresh current: CKE < 0.2V
3
mA
IDD7
Random Read current: 4 Banks Active Read with activate
every 20nS, Auto-Precharge Read every 20 nS; Burst = 4; tRCD
= 3; IOUT = 0mA; DQ, DM and DQS inputs changing twice per
clock cycle; Address changing once per clock cycle
340
320
300
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9412G2IB-5 | 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1 |
| W9412G6CH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9412G6IH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
| W9412G6IH-5 | 功能描述:IC DDR-400 SDRAM 128MB 66TSSOPII RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| W9412G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM |
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