參數(shù)資料
型號: W3HG264M72EEU806D6MG
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 6/11頁
文件大小: 700K
代理商: W3HG264M72EEU806D6MG
WV3HG264M72EEU-D6
October 2006
Rev. 1
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
DC OPERATING CONDITIONS
All Voltages Referenced to VSS
Parameter
Symbol
Rating
Units
Notes
Min.
Type
Max.
Supply Voltage
VCC
1.7
1.8
1.9
V
1
I/O Supply Voltage
VCCQ
1.7
1.8
1.9
V
4
VCCL Supply Voltage
VCCL
1.7
1.8
1.9
V
4
I/O Reference Voltage
VREF
0.49*VCCQ
0.50*VCCQ
0.51*VCCQ
V2
I/O Termination Voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
3
Notes:
1. VCC and VCCQ must track each other. VCCQ must be less than or equal to VCC.
2. VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/- percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
4. VCCQ tracks with VCC; VCCL track with VCC.
ABSOLUTE MAXIMUM RATINGS
SSTL_1.8V
Symbol
Parameter
Min
Max
Unit
VCC
Voltage on VCC pin relative to VSS
- 1.0
2.3
V
VCCQ
Voltage on VCCQ pin relative to VSS
- 0.5
2.3
V
VCCL
Voltage on VCCL pin relative to VSS
- 0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
- 0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
TCASE
Device operating Temperature
0
85
°C
IL
Input leakage current; Any input 0V<VIN<VCC;
VREF input 0V<VIN<<0.95; Other pins not
under test = 0V
Command/Address, RAS#,
CAS#, WE#
-90
90
A
CS#, CKE
-45
45
A
CK, CK#
-30
30
A
DM
-10
10
A
IOZ
Output leakage current; 0V<VOUT<VCCQ; DQs
and ODT are disable
DQ, DQS, DQS#
-10
10
A
IVREF
VREF leakage current; VREF = Valid VREF level
-36
36
A
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