參數(shù)資料
型號(hào)： W3H64M72E-400SBM
廠(chǎng)商： WHITE ELECTRONIC DESIGNS CORP
元件分類(lèi)： DRAM
英文描述： 64M X 72 DDR DRAM, 0.6 ns, PBGA208
封裝： 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù)： 15/32頁(yè)
文件大?。?/td> 944K
代理商： W3H64M72E-400SBM
W3H64M72E-XSBX
W3H64M72E-XSBXF
22
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2009
2010 White Electronic Designs Corp. All rights reserved
Rev. 9
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply voltage
VCC
1 .7
1 .8
1 .9
V
1
I/O Reference voltage
VREF
0.49 x VCCQ
0.50 x VCCQ
0.51 x VCCQ
V2
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF + 0.04
V
3
Notes:
1.
VCC and VCCQ are tied on the device.
2.
VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MIN
MAX
U nit
VCC/ VCCQ
Voltage on VCC pin relative to VSS
-0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage temperature
-55
125
°C
IL
Input leakage current; Any input 0V<VIN<VCC; Other pins
not under test = 0V
-20
20
μA
IOZ
Output leakage current;
0V<VOUT<VCC; DQs and ODT are disabled
-5
5
μA
IVREF
VREF leakage current; VREF = Valid VREF level
-8
8
μA
INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 1.8V
Parameter
Symbol
Max
Unit
Input capacitance (A0 - A13, BA0 - BA2 ,CS#, RAS#,CAS#,WE#, CKE, ODT)
CIN1
TBD
pF
Input capacitance CK, CK#
CIN2
TBD
pF
Input capacitance DM, DQS, DQS#
CIN3
TBD
pF
Input capacitance DQ0 - 71
COUT
TBD
pF
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W3H64M72E-533ES 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H64M72E-533ESC 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H64M72E-533ESI 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H64M72E-533ESM 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
W3H64M72E-533SB 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
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