參數(shù)資料
型號(hào)： W3H32M72E-533SB2C
廠商： WHITE ELECTRONIC DESIGNS CORP
元件分類： DRAM
英文描述： 32M X 72 DDR DRAM, 0.65 ns, PBGA208
封裝： 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù)： 16/30頁(yè)
文件大?。?/td> 0K
代理商： W3H32M72E-533SB2C
W3H32M72E-XSB2X
23
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.1 25
VCCQ + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
VIH(AC)
VREF + 0.250
—
V
AC Input High (Logic 1) Voltage DDR2-667
VIH(AC)
VREF + 0.200
—
V
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL(AC)
—
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL(AC)
—
VREF - 0.200
V
ODT DC ELECTRICAL CHARACTERISTICS
All voltages referenced to VSS
Parameter
Symbol
Min
Nom
Max
Unit
Notes
RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1
RTT1(EFF)
52
75
97
Ω
1
RTT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0
RTT2(EFF)
105
150
195
Ω
1
RTT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1
RTT3(EFF)
35
50
65
Ω
1
Deviation of VM with respect to VCCQ/2
VM
-6
6
%
2
Note: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.
2. Measure voltage (VM) at tested ball with no load
RTT(EFF) = VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC))
VM =
(2 x VM - 1) x 100
VCCQ
BGA THERMAL RESISTANCE
Description
Symbol
Typical
Units
Notes
Junction to Ambient (No Airow)
Theta JA
TBD
°C/W
1
Junction to Ball
Theta JB
TBD
°C/W
1
Junction to Case (Top)
Theta JC
TBD
°C/W
1
Note: These typical thermal resistances are for each DRAM die, if using the total power of the MCP, divide the
given values by 5.
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application
notes section for modeling conditions.
相關(guān)PDF資料
PDF描述
W3H32M72E-400SB2M 32M X 72 DDR DRAM, 0.6 ns, PBGA208
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W3HG2128M72AER534AD6MG 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H32M72E-533SB2I 制造商:Microsemi Corporation 功能描述:MICROCIRCUIT, DIGITAL, DDR2SDRAM, 2GB - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H32M72E-533SBC 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H32M72E-533SBI 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk
W3H32M72E-533SBM 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk
W3H32M72E-667ES 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
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