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參數(shù)資料
| 型號： | W3EG6464S262D3G |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 293K |
| 代理商： | W3EG6464S262D3G |
White Electronic Designs
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
May 2005
Rev. 3
W3EG6464S-JD3-D3
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C
≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Symbol
Conditions
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR266 &
200@CL=2
Max
Units
Operating Current
IDD0
One device bank; Active - Precharge; tRC=tRC
(MIN); tCK=tCK (MIN); DQ,DM and DQS inputs
changing once per clock cycle; Address and control
inputs changing once every two cycles.
1320
mA
Operating Current
IDD1
One device bank; Active-Read-Precharge Burst
= 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA;
Address and control inputs changing once per
clock cycle.
1520
mA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down mode; tCK=tCK
(MIN); CKE=(low)
48
rnA
Idle Standby Current
IDD2F
CS# = High; All device banks idle; tCK=tCK (MIN);
CKE = high; Address and other control inputs
changing once per clock cycle. VIN = VREF for DQ,
DQS and DM.
400
mA
Active Power-Down
Standby Current
IDD3P
One device bank active; Power-Down mode; tCK
(MIN); CKE=(low)
400
mA
Active Standby
Current
IDD3N
CS# = High; CKE = High; One device bank; Active-
Precharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM
and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once
per clock cycle.
760
mA
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst; One device
bank active; Address and control inputs changing
once per clock cycle; TCK= TCK (MIN); lOUT = 0mA.
1760
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing
once per clock cycle; tCK=tCK (MIN); DQ,DM and
DQS inputs changing once per clock cycle.
2000
rnA
Auto Refresh Current
IDD5
tRC = tRC (MIN)
2480
mA
Self Refresh Current
IDD6
CKE
≤ 0.2V
Standard
40
mA
Low Power
25
Operating Current
IDD7A
Four bank interleaving Reads (BL=4) with auto
precharge with tRC=tRC (MIN); tCK=tCK (MIN);
Address and control inputs change only during
Active Read or Write commands.
3840
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG6464S262JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED |
| W3EG6464S263D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED |
| W3EG6464S263JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED |
| W3EG6464S265AD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL |
| W3EG6464S265BD4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL |
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