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參數(shù)資料
| 型號： | W3E64M16S-266SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| 封裝： | 10 X 12.50 MM, PLASTIC, BGA-60 |
| 文件頁數(shù)： | 16/17頁 |
| 文件大?。?/td> | 761K |
| 代理商： | W3E64M16S-266SBC |
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XSBX
January 2007
Rev. 5
COMMAND
READ
NOP
CL = 2.5
DON'T CARE
TRANSITIONING DATA
DQ
DQS
T0
T1
T2
T2n
T3
T3n
COMMAND
READ
NOP
CL = 2
DQ
DQS
CLK
T0
T1
T2
T2n
T3
T3n
Burst Length = 4 in the cases shown
Shown with nominal tAC and nominal tDSDQ
DATA
CLK
FIGURE 4 – CAS LATENCY
FIGURE 5 – EXTENDED MODE REGISTER
DEFINITION
DLL
Enable
Disable
DLL
NA
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended Mode
Register (Ex)
Address Bus
Operating Mode
A10
A11
11
01
BA0
BA1
E0
0
1
Operating Mode
Reserved
E1, E0
Valid
-
E12
0
-
E10
0
-
E9
0
-
E8
0
-
E7
0
-
E6
0
-
E5
0
-
E4
0
-
E3
0
-
A12
E11
0
-
1. E14 and E13 must be "0, 1" to select the Extended Mode Register (vs. the base Mode Register)
2. The QFC# function is not supported.
E2
0
-
AUTO PRECHARGE ensures that the precharge is
initiated at the earliest valid stage within a burst. This
“earliest valid stage” is determined as if an explicit
precharge command was issued at the earliest possible
time, without violating tRAS (MIN).The user must not issue
another command to the same bank until the precharge
time (tRP) is completed.
BURST TERMINATE
The BURST TERMINATE command is used to truncate
READ bursts (with auto precharge disabled). The most
recently registered READ command prior to the BURST
TERMINATE command will be truncated. The open page
which the READ burst was terminated from remains
open.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the
DDR SDRAM and is analogous to CAS-BEFORE-RAS
(CBR) REFRESH in conventional DRAMs. This command
is nonpersistent, so it must be issued each time a refresh
is required.
The addressing is generated by the internal refresh
controller. This makes the address bits “Don’t Care” during
an AUTO REFRESH command. Each DDR SDRAM
requires AUTO REFRESH cycles at an average interval
of 7.8125μs (maximum).
To allow for improved efficiency in scheduling and
switching between tasks, some flexibility in the absolute
refresh interval is provided. A maximum of eight AUTO
REFRESH commands can be posted to any given DDR
SDRAM, meaning that the maximum absolute interval
between any AUTO REFRESH command and the next
AUTO REFRESH command is 9 x 7.8125μs (70.3μs). This
maximum absolute interval is to allow future support for
DLL updates internal to the DDR SDRAM to be restricted
to AUTO REFRESH cycles, without allowing excessive
drift in tAC between updates.
Although not a JEDEC requirement, to provide for future
functionality features, CKE must be active (High) during
the AUTO REFRESH period. The AUTO REFRESH period
begins when the AUTO REFRESH command is registered
and ends tRFC later.
SELF REFRESH*
The SELF REFRESH command can be used to retain
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| W3E64M16S-266SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-333NBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-333NBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-333NBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
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