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參數(shù)資料
| 型號： | W3E32M64S-200BM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 847K |
| 代理商： | W3E32M64S-200BM |
W3E32M64S-XBX
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2007
Rev. 4
50. ICC2N species the DQ, DQS, and DM to be driven to a valid high or low logic level.
ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs to
remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC voltage range of 2.6V ± 100mV.
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相關(guān)代理商/技術(shù)參數(shù) |
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| W3E32M64S-200SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-200SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64S-200SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64S-250BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
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