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參數(shù)資料
| 型號： | W3E16M72S-200BI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封裝： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 9/17頁 |
| 文件大?。?/td> | 766K |
| 代理商： | W3E16M72S-200BI |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E16M72S-XBX
February 2005
Rev. 7
Document Title
16M x 72 DDR SDRAM Multi-Chip Package
Revision History
Rev # History
Release Date Status
Rev 0
Initial Release
April 2002
Advanced
Rev 1
Changes (Pg. 1, 10)
1.1 Add Currents to data sheet in place of TBD
September 2002
Advanced
Rev 2
Changes (Pg. 1, 8, 9, 10, 11, 12)
2.1 Change product status from Advanced to Preliminary
November 2002
Preliminary
Rev 3
Changes (Pg. 1, 10, 14, 15, 16)
3.1 Change ICCI to 825 mA @ 250/266 MHz
3.2 Change ICC1 to 775 mA @ 200 MHz
3.3 Change ICC4R to 1250 mA @ 250/266 MHz
3.4 Change ICC4R to 1075 mA @ 200 MHz
3.5 Change ICC4W to 1250 mA @ 250/266 MHz
3.6 Change ICC4W to 1075 mA @ 200 MHz
3.7 Change ICC6A to ICC6
3.8 Change ICC8 to ICC7
3.9 Change ICC7 to 2000 mA @ 250/266 MHz
3.10 Change ICC7 to 1875 mA @ 200 MHz
3.11 Add Thermal Resistance Table
December 2002
Preliminary
Rev 4
Changes (Pg. 1, 14, 15)
4.1 Change mechanical drawing to new style
4.2 Change part number to new style
November 2003
Preliminary
Rev 5
Changes (Pg. 1, 10, 11, 12, 14, 15)
5.1 Change TREF from 70.3μs max to 35μs max for Military
temperature only
5.2 Change TREFI from 7.8μs max to 3.9μs max for Military
temperature only
5.3 Change Thermal Resistance Table ΘJC, ΘJB, ΘJA
5.4 Add Note 53 for VTT, pg. 14
April 2004
Preliminary
Rev 6
Changes (Pg. 1, 10, 11, 12, 13, 16, 17)
6.1 Change status to Final
6.2 Correct typographical errors
September 2004
Final
Rev 7
Changes (Pg. 1, 11, 17)
7.1 Update ICC Specications table
February 2005
Final
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PDF描述 |
|---|---|
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BC | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3E16M72SR-200BM | 16M X 72 DDR DRAM, 0.75 ns, PBGA219 |
| W3EG2128M72AFSR262AD3M | 256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| W3EG2128M72AFSR335AD3S | 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3E16M72S-200BM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx72 DDR SDRAM |
| W3E16M72S-250BC | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E16M72S-250BI | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M72S-250BM | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E16M72S-266BC | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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