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參數(shù)資料
| 型號： | W39F010Q-70 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | 8 X 14 MM, STSOP-32 |
| 文件頁數(shù)： | 22/26頁 |
| 文件大小： | 336K |
| 代理商： | W39F010Q-70 |
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W39F010
Publication Release Date: June 17, 2002
- 5 -
Revision A2
Read Command
The device will automatically power-up in the read state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value
ensures that no spurious alteration of the memory content occurs during the power transition.
The device will automatically returns to read state after completing an Embedded Program or
Embedded Erase algorithm.
Refer to the AC Read Characteristics and Waveforms for the specific timing parameters.
Auto-select Command
Flash memories are intended for use in applications where the local CPU can alter memory contents.
As such, manufacture and device codes must be accessible while the device resides in the target
system.
The device contains an auto-select command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the auto-select command sequence into the
command register. Following the command write, a read cycle from address XX00H retrieves the
manufacture code of DAH. A read cycle from address XX01H returns the device code (W39F010 =
A1).
To terminate the operation, it is necessary to write the auto-select exit command sequence into the
register.
Byte Program Command
The device is programmed on a byte-by-byte basis. Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two "unlock" write cycles, followed by the program
set-up command. The program address and data are written next, which in turn initiate the Embedded
program algorithm. Addresses are latched on the falling edge of #CE or #WE, whichever happens later
and the data is latched on the rising edge of #CE or #WE, whichever happens first. The rising edge of
#CE or #WE (whichever happens first) begins programming using the Embedded Program Algorithm.
Upon executing the algorithm, the system is not required to provide further controls or timings. The
device will automatically provide adequate internally generated program pulses and verify the
programmed cell margin.
The automatic programming operation is completed when the data on DQ7 (also used as Data Polling)
is equivalent to the data written to this bit at which time the device returns to the read mode and
addresses are no longer latched (see "Hardware Sequence Flags"). Therefore, the device requires that
a valid address to the device be supplied by the system at this particular instance of time for Data
Polling operations. Data Polling must be performed at the memory location which is being
programmed.
Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a
hardware reset occurs during the programming operation, the data at that particular location will be
corrupted.
Programming is allowed in any sequence and across page boundaries. Beware that a data "0" cannot
be programmed back to a "1". Attempting to program 0 back to 1, the toggle bit will stop toggling. Only
erase operations can convert "0"s to "1"s.
Refer to the Programming Command Flow Chart using typical command strings and bus operations.
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相關(guān)代理商/技術(shù)參數(shù) |
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| W39F010Q-70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY |
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| W39F010T-90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K 】 8 CMOS FLASH MEMORY |
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