參數(shù)資料
型號(hào)： W25X80ALSSIG
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 1M X 8 FLASH 2.7V PROM, PDSO8
封裝： 0.208 INCH, GREEN, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 34/45頁(yè)
文件大?。?/td> 1342K
代理商： W25X80ALSSIG
W25X10AL, W25X20AL, W25X40AL, W25X80AL
- 4 -
1. GENERAL DESCRIPTION
The W25X10AL (1M-bit), W25X20AL (2M-bit), W25X40AL (4M-bit) and W25X80AL (8M-bit) Serial
Flash memories provide a storage solution for systems with limited space, pins and power. The 25X
series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for
code download applications as well as storing voice, text and data. The devices operate on a single
2.3V to 3.6V power supply with current consumption as low as 5mA active and 1A for power-down.
All devices are offered in space-saving packages.
The W25X10AL/20AL/40AL/80AL array is organized into 512/1024/2048/4096 programmable pages
of 256-bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction.
Pages can be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip
(chip erase). The W25X10AL/20AL/40AL/80AL has 32/64/128/256 erasable sectors and 2/4/8/16
erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that
require data and parameter storage. (See figure 2.)
The W25X10AL/20AL/40AL/80AL supports the standard Serial Peripheral Interface (SPI), and a high
performance dual output SPI using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial
Data Out. SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of
100MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to
those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification.
2. FEATURES
Family of Serial Flash Memories
– W25X10AL: 1M-bit / 128K-byte (131,072)
– W25X20AL: 2M-bit / 256K-byte (262,144)
– W25X40AL: 4M-bit / 512K-byte (524,288)
– W25X80AL: 8M-bit / 1M-byte (1,048,576)
– 256-bytes per programmable page
– Uniform 4K-byte Sectors / 64K-byte Blocks
SPI with Single or Dual Outputs
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
Data Transfer up to 100M-bits / second
– Clock operation to 50MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– Block Erase (64K-byte)
– Page program up to 256 bytes <2ms
– Minimum 100,000 erase/write cycles
– 20-year retention
Low Power Consumption, Wide
Temperature Range
– Single 2.3 to 3.6V supply
– 5mA active current, 1A Power-down (typ)
– -40° to +85°C operating range
Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Space Efficient Packaging
– 8-pin SOIC 150-mil
(1)
– 8-pin SOIC 208-mil (W25X40AL/80AL)
– 8-pin PDIP 300-mil
– 8-pad WSON 6x5-mm
Note 1: See “Valid Part Number and Top Side Marking” Section, Note 2 for special ordering information.
相關(guān)PDF資料
PDF描述
W25X40ALDAIZ 512K X 8 FLASH 2.7V PROM, PDIP8
W25X10ALSNIG 128K X 8 FLASH 2.7V PROM, PDSO8
W27C257P-12 32K X 8 EEPROM 12V, 120 ns, PQCC32
W27L01-70 128K X 8 EEPROM 12V, 70 ns, PDIP32
W27LE520W-90 64K X 8 EEPROM 3V, 90 ns, PDSO20
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