參數(shù)資料
型號(hào): W25X80ALSSIG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 8 FLASH 2.7V PROM, PDSO8
封裝: 0.208 INCH, GREEN, PLASTIC, SOIC-8
文件頁數(shù): 14/45頁
文件大?。?/td> 1342K
代理商: W25X80ALSSIG
W25X10AL, W25X20AL, W25X40AL, W25X80AL
Publication Release Date: October 7, 2009
- 21 -
Revision D
10.2.9 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction
except that data is output on two pins, DO and DIO, instead of just DO. This allows data to be
transferred from the W25X10AL/20AL/40AL/80AL at twice the rate of standard SPI devices. The Fast
Read Dual Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up
or for applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the DIO pin should be high-impedance prior to the falling edge of the
first data out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25X40ALDAIZ 512K X 8 FLASH 2.7V PROM, PDIP8
W25X10ALSNIG 128K X 8 FLASH 2.7V PROM, PDSO8
W27C257P-12 32K X 8 EEPROM 12V, 120 ns, PQCC32
W27L01-70 128K X 8 EEPROM 12V, 70 ns, PDIP32
W27LE520W-90 64K X 8 EEPROM 3V, 90 ns, PDSO20
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