參數(shù)資料
型號: W24L11T-70L
元件分類: SRAM
英文描述: 128K X 8 STANDARD SRAM, 70 ns, PDSO32
封裝: TSOP-32
文件頁數(shù): 6/11頁
文件大?。?/td> 195K
代理商: W24L11T-70L
Preliminary W24L11
- 4 -
AC Characteristics, continued
(VDD = 3.0V to 3.6 V; VSS = 0V; TA (
°C) = 0 to 70)
Read Cycle
PARAMETER
SYMBOL
W24L11-70L/LL
UNIT
MIN.
MAX.
Read Cycle Time
TRC
70
-
nS
Address Access Time
TAA
-
70
nS
Chip Select Access Time
TACS
-
70
nS
Output Enable to Output Valid
TAOE
-
35
nS
Chip Selection to Output in Low Z
TCLZ*
10
-
nS
Output Enable to Output in Low Z
TOLZ*
5
-
nS
Chip Deselection to Output in High Z
TCHZ*
-
30
nS
Output Disable to Output in High Z
TOHZ*
-
30
nS
Output Hold from Address Change
TOH
10
-
nS
These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
SYMBOL
W24L11-70L/LL
UNIT
MIN.
MAX.
Write Cycle Time
TWC
70
-
nS
Chip Selection to End of Write
TCW
55
-
nS
Address Valid to End of Write
TAW
55
-
nS
Address Setup Time
TAS
0
-
nS
Write Pulse Width
TWP
50
-
nS
Write Recovery Time
CS1
, CS2, WE
TWR
0
-
nS
Data Valid to End of Write
TDW
45
-
nS
Data Hold from End of Write
TDH
0
-
nS
Write to Output in High Z
TWHZ*
-
25
nS
Output Disable to Output in High Z
TOHZ*
-
25
nS
Output Active from End of Write
TOW
5
-
nS
These parameters are sampled but not 100% tested
相關(guān)PDF資料
PDF描述
WS128K32-70H1Q 128K X 32 MULTI DEVICE SRAM MODULE, 70 ns, CPGA66
WV3HG264M64EEU665D6GG 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
WV3HG264M64EEU665D6SG 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
WEDPS512K32LV-15BM 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PBGA143
WS128K32N-25H1CA 128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CHIP66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W24L11T-70LE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
W24L11T-70LL 制造商:WINBOND 制造商全稱:Winbond 功能描述:128K X 8 High Speed CMOS Static RAM
W24L257 制造商:WINBOND 制造商全稱:Winbond 功能描述:32K X 8 High Speed CMOS Static RAM
W24L257A 制造商:WINBOND 制造商全稱:Winbond 功能描述:32K X 8 High Speed CMOS Static RAM
W24L257A-12 制造商:WINBOND 制造商全稱:Winbond 功能描述:32K X 8 High Speed CMOS Static RAM