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參數(shù)資料
| 型號： | VQ2004J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.41A的P溝道增強型MOSFET) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 60V的，夾斷電流，0.41A的P溝道增強型MOSFET的） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | VQ2004J |
VQ2004J
4
Siliconix
P-37655—Rev. B, 25-Jul-94
Typical Characteristics (25 C Unless Otherwise Noted) (Cont’d)
–0.1
–1.0
100
10
1
–15.0
–12.5
–10.0
0
0
100
500
–7.5
–5.0
200
300
400
–2.5
–80 V
200
160
120
0
0
–10
–50
80
40
–20
–30
–40
–10
–1
–0.01
–1.0
–1.5
–4.5
–0.1
–2.0
–2.5
–3.0
–3.5
–4.0
Threshold Region
Capacitance
Gate Charge
Load Condition Effects on Switching
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
–55 C
Q
g
– Total Gate Charge (pC)
125 C
–
I
D
C
–
V
G
t
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
I
D
= –0.5 A
V
DS
= –50 V
t
d(on)
t
d(off)
t
r
t
f
T
J
= 150 C
25 C
V
DS
= –5 V
500
400
300
0
0
–100
–500
200
100
–200
–300
–400
10
100
100
10
1
t
d(on)
t
d(off)
t
r
t
f
t
R
G
– Gate Resistance (W)
Drive Resistance Effects on Switching
V
DD
= –25 V
R
L
= 50
V
GS
= 0 to –10 V
I
D
= –500 mA
I
D
– Drain Current (A)
Transconductance
I
D
– Drain Current (A)
g
f
25 C
125 C
T
J
= –55 C
V
DD
= –25 V
R
L
= 25
V
GS
= 0 to –10 V (Pulse)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VQ2004P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 410MA I(D) | DIP |
| VQ2006J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP |
| VQ2006P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP |
| VQ2100-51 | 制造商:SMC Corporation of America 功能描述:VALVE, 5 PORT, SOLENOID, 24VDC, BASE MOUNTED |
| VQ2100N-51 | 制造商:SMC Corporation of America 功能描述:SOLENOID VALVE, 5 PORT, BASE MOUNT, 2 POSITION SINGLE, 24VDC, CV 0.8 |
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