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參數(shù)資料
| 型號： | VQ2004J |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.41A的P溝道增強型MOSFET) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 60V的，夾斷電流，0.41A的P溝道增強型MOSFET的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | VQ2004J |
VQ2004J
Siliconix
P-37655—Rev. B, 25-Jul-94
3
Typical Characteristics (25 C Unless Otherwise Noted)
–20
–16
–12
–8
–4
0
–3.8 V
0
–0.4
–0.8
–1.2
–1.6
–2.0
–3.6 V
–3.4 V
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
D
–
I
D
–
I
D
–
r
D
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
V
GS
= –10 V
T
J
= 25 C
T
J
= 25 C
T
J
– Junction Temperature ( C)
r
D
–
(
V
GS
= –4.0 V
–2.0
0
–1
–2
–3
–4
–5
–1.6
–1.2
–0.8
–0.4
0
–9 V
–8 V
–7 V
–6 V
–5 V
–4 V
–0.5
–0.4
–0.3
0
0
–2
–10
–0.2
–0.1
–4
–6
–8
125 C
T
J
= –55 C
10
8
6
0
0
–0.5
–3.0
4
2
–1.0
–1.5
–2.0
–2.5
7
0
–4
–8
–12
–16
–20
6
5
4
0
3
2
1
I
D
= 0.1 A
0.5 A
1.0 A
T
J
= 25 C
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= –10 V
I
D
= 0.5 A
V
DS
= –10 V
V
GS
= –10 V
–3.2 V
25 C
r
D
–
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VQ2004P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 410MA I(D) | DIP |
| VQ2006J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP |
| VQ2006P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 90V V(BR)DSS | 410MA I(D) | DIP |
| VQ2100-51 | 制造商:SMC Corporation of America 功能描述:VALVE, 5 PORT, SOLENOID, 24VDC, BASE MOUNTED |
| VQ2100N-51 | 制造商:SMC Corporation of America 功能描述:SOLENOID VALVE, 5 PORT, BASE MOUNT, 2 POSITION SINGLE, 24VDC, CV 0.8 |
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