參數(shù)資料
型號(hào)： VNS7NV0413TR
廠商： 意法半導(dǎo)體
元件分類： 熱敏電阻
英文描述： THERMISTOR, PTC; Series:B598; Thermistor type:PTC; Resistance:6R; Tolerance, resistance:+/-25%; Temp, op. max:125(degree C); Voltage, operating:160V; Case style:Radial; Current, tripping:0.8A; Diameter, body:17.5mm; Length, RoHS Compliant: Yes
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 2/29頁
文件大小： 488K
代理商： VNS7NV0413TR
2/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
Symbol
Parameter
Value
SO-8
Unit
SOT-223
DPAK/IPAK
V
DS
V
IN
I
IN
R
IN MIN
I
D
I
R
V
ESD1
Drain-source Voltage (V
IN
=0V)
Input Voltage
Input Current
Minimum Input Series Impedance
Drain Current
Reverse DC Output Current
Electrostatic Discharge (R=1.5K
, C=100pF)
Electrostatic Discharge on output pin only
(R=330
, C=150pF)
Total Dissipation at T
c
=25°C
Maximum Switching Energy (L=0.7mH;
R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=9A)
Maximum Switching Energy (L=0.6mH;
R
L
=0
; V
bat
=13.5V; T
jstart
=150oC; I
L
=9A)
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally Clamped
Internally Clamped
+/-20
150
Internally Limited
-10.5
4000
V
V
mA
A
A
V
V
ESD2
16500
V
P
tot
7
4.6
60
W
E
MAX
40
40
mJ
E
MAX
37
mJ
T
j
T
c
T
stg
Internally limited
Internally limited
-55 to 150
°C
°C
°C
1
SO-8 Package (*)
DRAIN
DRAIN
DRAIN
8
DRAIN
INPUT
SOURCE
SOURCE
SOURCE
1
4
5
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
相關(guān)PDF資料
PDF描述
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VNV10N07 SENSOR, MINIATURE, NTC, 5K; Series:B578; Thermistor type:NTC; Resistance:5kR; Tolerance, resistance:+/-1%; Beta value:3988; Temperature, lower limit, beta value:-40(degree C); Temperature, upper limit, beta value:100(degree C); RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS7NV04-E 功能描述:MOSFET N-Ch 40V 6A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS7NV04P-E 功能描述:MOSFET OMNIFET II Low Side 60mOhm 6A 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS7NV04PTR-E 功能描述:MOSFET OMNIFET II VIPower 60mOhm 6A 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS7NV04TR-E 功能描述:MOSFET N-Ch 40V 6A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNSC-3-4U 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:TRI-LOC, SMPTE 304, PLUG PRE-POLISHED
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