參數(shù)資料
型號(hào)： VNS3NV04D-E
廠商： 意法半導(dǎo)體
英文描述： OMNIFET II fully autoprotected Power MOSFET
中文描述： OMNIFET二充分autoprotected功率MOSFET
文件頁(yè)數(shù)： 6/21頁(yè)
文件大?。?/td> 311K
代理商： VNS3NV04D-E
Electrical specifications
VNS3NV04D-E
6/21
2
Electrical specifications
Figure 3.
Current and voltage conventions
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
DRAIN 1
INPUT 1
SOURCE 2
I
IN1
V
IN1
INPUT 2
I
IN2
SOURCE 1
DRAIN 2
V
IN2
I
D2
I
D1
V
DS1
V
DS1
R
IN1
R
IN2
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DSn
Drain-Source Voltage (V
INn
=0V)
Internally clamped
V
V
INn
Input voltage
Internally clamped
V
I
INn
Input current
+/-20
mA
R
IN MINn
Minimum input series impedance
220
I
Dn
Drain current
Internally limited
A
I
Rn
Reverse DC output current
-5.5
A
V
ESD1
Electrostatic discharge (R=1.5K
, C=100pF)
4000
V
V
ESD2
Electrostatic discharge on output pins only (R=330
,
C=150pF)
16500
V
P
tot
Total dissipation at T
c
=25°C
4
T
j
Operating junction temperature
Internally limited
°C
T
c
Case operating temperature
Internally limited
°C
T
stg
Storage temperature
-55 to 150
°C
相關(guān)PDF資料
PDF描述
VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNS7NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNS7NV0413TR THERMISTOR, PTC; Series:B598; Thermistor type:PTC; Resistance:6R; Tolerance, resistance:+/-25%; Temp, op. max:125(degree C); Voltage, operating:160V; Case style:Radial; Current, tripping:0.8A; Diameter, body:17.5mm; Length, RoHS Compliant: Yes
VNT008D TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5.77A I(D) | TO-220AB
VNS008D TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.77A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS3NV04DP-E 功能描述:功率驅(qū)動(dòng)器IC OMNIFET II VIPower 35mOhm 12A 40V RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNS3NV04DPTR-E 功能描述:MOSFET OMNIFET II VIPower 35mOhm 12A 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS3NV04DTR-E 功能描述:MOSFET N-Ch 45V 3.5A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS3NV04-E 功能描述:電源開關(guān) IC - 配電 N-Ch 40V 3.5A Omni RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VNS3NV04P-E 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 OMNIFET II Low Side 120mOhm 3.5A 40V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
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