參數(shù)資料
型號(hào)： VNS1NV0413TR
廠商： 意法半導(dǎo)體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁(yè)數(shù)： 3/18頁(yè)
文件大小： 392K
代理商： VNS1NV0413TR
3/18
VND1NV04 / VNN1NV04 / VNS1NV04
THERMAL DATA
(*)
When mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35
μ
m thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS
(
-40°C < T
j
< 150°C, unless otherwise specified)
OFF
ON
Symbol
Parameter
Value
SO-8
Unit
SOT-223
18
DPAK
3.5
R
thj-case
R
thj-lead
R
thj-amb
Thermal Resistance Junction-case
}}}
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient
MAX
MAX
MAX
°C/W
°C/W
°C/W
15
70 (*)
65(*)
54 (*)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CLAMP
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (V
IN
=0V)
V
IN
=0V; I
D
=0.5A
40
45
55
V
V
CLTH
V
IN
=0V; I
D
=2mA
36
V
V
INTH
V
DS
=V
IN
; I
D
=1mA
0.5
2.5
V
I
ISS
V
DS
=0V; V
IN
=5V
100
150
μ
A
V
INCL
I
IN
=1mA
I
IN
=-1mA
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
=25V; V
IN
=0V
6
-1.0
6.8
8
-0.3
30
75
V
I
DSS
μ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
250
500
Unit
R
DS(on)
Static Drain-source On
Resistance
V
IN
=5V; I
D
=0.5A; T
j
=25°C
V
IN
=5V; I
D
=0.5A
m
1
相關(guān)PDF資料
PDF描述
VV6404 Mono and Colour Digital Video CMOS Image Sensors
VV6404C001 Mono and Colour Digital Video CMOS Image Sensors
VV6404C001-B2 WIRE
VN06(011Y) Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Black; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
VN21(011Y) Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:White/Green; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS1NV04D 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04D13TR 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04D-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DP-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DPTR-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*