參數(shù)資料
型號: VNP28N04FI
廠商: 意法半導(dǎo)體
英文描述: Fully Autoprotected Power MOSFET(全自動保護(hù)功率MOSFET)
中文描述: 充分Autoprotected功率MOSFET(全自動保護(hù)功率MOSFET的)
文件頁數(shù): 3/13頁
文件大小: 139K
代理商: VNP28N04FI
ELECTRICAL CHARACTERISTICS
(continued)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Output Capacitance
V
DS
= 13 V
I
D
= 14 A
9
18
S
C
oss
V
DS
= 13 V
f = 1 MHz
V
in
= 0
700
1100
pF
SWITCHING (**)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 14 A
R
gen
= 10
100
330
400
155
300
800
900
400
ns
ns
ns
ns
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 14 A
R
gen
= 1000
450
1.7
7.5
3.4
900
4
25
10
ns
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 12 V
I
D
= 14 A
R
gen
= 10
I
D
= 10 A
35
Q
i
Total Input Charge
V
in
= 10 V
60
nC
SOURCE DRAIN DIODE
Symbol
V
SD
(
)
t
rr
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward On Voltage
I
SD
= 14 A
I
SD
= 14 A
V
DD
= 30 V
(see test circuit, figure 5)
V
in
= 0
di/dt = 100 A/
μ
s
T
j
= 25
o
C
2
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
180
0.45
7
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
19
19
28
28
41
41
A
A
t
dlim
(
)
Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
25
70
40
120
μ
s
μ
s
o
C
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
150
T
jrs
(
)
I
gf
(
)
135
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 10 mH
R
gen
= 1 K
2.5
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNP28N04FI-VNB28N04-VNV28N04
3/13
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