參數(shù)資料
型號(hào): VNN1NV04
廠商: 意法半導(dǎo)體
英文描述: “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述: “OMNIFET二”:充分AUTOPROTECTED功率MOSFET
文件頁(yè)數(shù): 2/18頁(yè)
文件大?。?/td> 392K
代理商: VNN1NV04
2/18
VND1NV04 / VNN1NV04 / VNS1NV04
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
Symbol
Parameter
Value
SO-8
Unit
SOT-223
DPAK
V
DS
V
IN
I
IN
R
IN MIN
I
D
I
R
V
ESD1
Drain-source Voltage (V
IN
=0V)
Input Voltage
Input Current
Minimum Input Series Impedance
Drain Current
Reverse DC Output Current
Electrostatic Discharge (R=1.5K
, C=100pF)
Electrostatic Discharge on output pin only
(R=330
, C=150pF)
Total Dissipation at T
c
=25°C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally Clamped
Internally Clamped
+/-20
330
Internally Limited
-3
4000
V
V
mA
A
A
V
V
ESD2
16500
V
P
tot
T
j
T
c
T
stg
7
8.3
35
W
°C
°C
°C
Internally limited
Internally limited
-55 to 150
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
CURRENT AND VOLTAGE CONVENTIONS
(*) For the pins configuration related to SOT-223 and DPAK see outline at page 1.
DRAIN
DRAIN
DRAIN
8
DRAIN
INPUT
SOURCE
SOURCE
SOURCE
1
4
5
SO-8 Package (*)
相關(guān)PDF資料
PDF描述
VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNS3NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VND3NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VND3NV04-1 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VV6411 XTAL MTL T/H HC49/U
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNN1NV0413TR 功能描述:功率驅(qū)動(dòng)器IC N-Ch 40V 1.7A Omni RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNN1NV04P-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET
VNN1NV04PTR-E 功能描述:MOSFET 40V 1.7A OMNIFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNN1NV04TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET
VNN1NV04TR-E 功能描述:功率驅(qū)動(dòng)器IC N-Ch 40V 1.7A Omni RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube