參數(shù)資料
型號: VNN1NV04
廠商: 意法半導(dǎo)體
英文描述: “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述: “OMNIFET二”:充分AUTOPROTECTED功率MOSFET
文件頁數(shù): 16/18頁
文件大?。?/td> 392K
代理商: VNN1NV04
16/18
VND1NV04 / VNN1NV04 / VNS1NV04
1
SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (
± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
12.4
60
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
All dimensions are in mm.
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
12
4
8
1.5
1.5
5.5
4.5
2
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
Top
cover
tape
End
Start
No components
No components
Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
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VNN1NV04P-E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET
VNN1NV04PTR-E 功能描述:MOSFET 40V 1.7A OMNIFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNN1NV04TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OMNIFET II fully autoprotected Power MOSFET
VNN1NV04TR-E 功能描述:功率驅(qū)動(dòng)器IC N-Ch 40V 1.7A Omni RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube