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參數(shù)資料
| 型號： | VND10N06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | “OMNIFET ”：Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率ＭＯＳＦＥＴ) |
| 中文描述： | “OMNIFET”：充分Autoprotected功率MOSFET（全自動(dòng)保護(hù)功率MOSFET的） |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 167K |
| 代理商： | VND10N06 |
PROTECTION FEATURES
During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as V
IN
> V
IH
.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150
μ
A) flows into the INPUT pin in order to
supply the internal circuitry.
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal PowerMOSFET.
In this condition, the Power MOSFET gate is set
to a voltage high enough to sustain the inductive
load current even if the INPUTpin is driven to 0V.
The device integrates an active current limiter
circuit which limits the drain current I
D
to I
lim
whateverthe INPUTpin Voltage.
When the current limiter is active, the device
operatesin thelinear region, so power dissipation
may exceed the heatsinkingcapability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperaturethreshold T
jsh
.
If T
j
reaches T
jsh
, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when T
j
has cooled down to
T
jrs
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
4/14
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PDF描述 |
|---|---|
| VND10N06-1 | “OMNIFET ”：Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率ＭＯＳＦＥＴ) |
| VNN1NV0413TR | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| VNS1NV0413TR | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND10N06 | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH D-PAK |
| VND10N06-1 | 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 10A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND10N0613TR | 功能描述:電源開關(guān) IC - 配電 OMNIFET POWER MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND10N06-1-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 10A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VND10N06-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 10A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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