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參數(shù)資料
| 型號： | VN2210N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | INDUCTOR, 1812 CASE, 1000UH; Inductor type:Wirewound; Inductance:1000uH; Tolerance, inductance:+/-10%; Resistance:30R; Current, DC max:70mA; Frequency, resonant:2.3MHz; Case style:1812; Q factor:20; Material, core:Ferrite; Tolerance, RoHS Compliant: Yes |
| 中文描述： | 1200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 44K |
| 代理商： | VN2210N3 |
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
07/08/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
VN2210
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
G
T
j
(
°
C)
G
V
(
R
D
(
V
DS(ON)
GS(th)
and R
Variation with Temperature
On-Resistance vs. Drain Current
R
D
(
B
D
(
T
j
(
°
C)
Transfer Characteristics
V
GS
(volts)
I
D
Capacitance vs. Drain-to-Source Voltage
500
C
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
10
20
30
40
375
250
0
0
2
4
6
8
10
10
8
6
4
2
0
-50
0
50
100
150
1.1
1.0
1.0
0.8
0.6
0.4
0.2
0
1.2
1.1
1.0
0.9
0.8
0.7
10
8
6
4
2
0
2
4
6
8
10
-50
0
50
100
150
300 pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55
°
C
V
DS
= 25V
150
°
C
0
4
8
12
20
16
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
900 pF
2.0
1.6
1.2
0.8
0.4
V
GS(th)
@ 10mA
25
°
C
125
0
R
DS(ON)
@ 10V, 4A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2210N3 P003 | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 100V 1.2A 3-Pin TO-92 T/R |
| VN2210N3-G | 功能描述:MOSFET 100V 0.35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2210N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2210N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN2210N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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