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參數(shù)資料
| 型號： | VN2210N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | INDUCTOR, 1812 CASE, 1000UH; Inductor type:Wirewound; Inductance:1000uH; Tolerance, inductance:+/-10%; Resistance:30R; Current, DC max:70mA; Frequency, resonant:2.3MHz; Case style:1812; Q factor:20; Material, core:Ferrite; Tolerance, RoHS Compliant: Yes |
| 中文描述： | 1200 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | VN2210N3 |
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
1.2A
8.0A
1.2A
8.0A
TO-39
1.7A
10.0A
6.0W
21
125
1.7A
10.0A
*
I
D
(continuous) is limited by max rated T
j
.
VN2210
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
A
Static Drain-to-Source
ON-State Resistance
ns
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V
I
D
= 2A
R
GEN
= 10
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
100
V
V
GS
= 0V, I
D
= 10mA
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 1A
V
GS
= 10V, I
D
= 4A
V
GS
= 10V, I
D
= 4A
V
DS
= 25V, I
D
= 2A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.3
-5.5
mV/
°
C
1
100
nA
Zero Gate Voltage Drain Current
50
μ
A
10
mA
I
D(ON)
ON-State Drain Current
3
4.5
8
17
R
DS(ON)
0.4
0.5
0.27
0.35
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.85
1.2
%/
°
C
1.2
Input Capacitance
300
500
Common Source Output Capacitance
125
200
pF
Reverse Transfer Capacitance
50
65
Turn-ON Delay Time
10
15
Rise Time
10
15
Turn-OFF Delay Time
50
65
Fall Time
30
50
Diode Forward Voltage Drop
1.0
1.6
V
V
GS
= 0V, I
SD
= 4A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
500
ns
Notes
:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
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