參數(shù)資料
型號: VN0606L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓60V,夾斷電流0.33A的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET晶體管(最小漏源擊穿電壓60V的,夾斷電流0.33A的N溝道增強型MOSFET的晶體管)
文件頁數(shù): 1/4頁
文件大?。?/td> 95K
代理商: VN0606L
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
Document Number: 70201
S-00591—Rev. D, 03-Apr-00
www.siliconix.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
TN0601L
60
1.8 @ V
GS
= 10 V
0.5 to 2
0.47
VN0606L
3 @ V
GS
= 10 V
0.8 to 2
0.33
VN66AFD
3 @ V
GS
= 10 V
0.8 to 2.5
1.46
Low On-Resistance: 1.2
Low Threshold: <1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
TO-220SD
(Tab Drain)
Top View
TN0601L
VN0606L
VN66AFD
1
S
D
G
2
3
Parameter
Symbol
TN0601L
VN0606L
VN66AFD
b
Unit
Drain-Source Voltage
V
DS
60
60
60
V
Gate-Source Voltage
V
GS
20
30
30
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.47
0.33
1.46
A
T
A
= 100 C
0.29
0.21
0.92
Pulsed Drain Current
a
I
DM
1.5
1.6
3
Power Dissipation
T
A
= 25 C
P
D
0.8
0.8
15
W
T
A
= 100 C
0.32
0.32
6
Maximum Junction-to-Ambient
R
thJA
156
156
C/W
Maximum Junction-to-Case
R
thJC
8.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
Reference case for all temperature testing.
相關PDF資料
PDF描述
VN0606 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V,N溝道增強型垂直DMOS結構場效應管)
VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs
VN0606L N-Channel Enhancement-Mode Vertical DMOS FETs
VN0610L N-Channel 60-V (D-S) MOSFETs with Zener Gate
VN0635 N-Channel Enhancement-Mode Vertical DMOS FETs
相關代理商/技術參數(shù)
參數(shù)描述
VN0606L-G 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN0606L-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN0606L-G P003 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 60V 0.33A 3-Pin TO-92 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN0606L-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN0606L-G P013 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET