參數(shù)資料
型號: VN0635
廠商: Supertex, Inc.
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: N溝道增強型場效應(yīng)管垂直的DMOS
文件頁數(shù): 1/4頁
文件大?。?/td> 38K
代理商: VN0635
7-171
VN0635
VN0640
BV
DSS
/
BV
DGS
350V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
Die
10
10
0.75A
VN0635N3
VN0635ND
400V
0.75A
VN0640N3
VN0640ND
MIL visual screening available
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Order Number / Package
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
TO-92
Ordering Information
S G D
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PDF描述
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