參數(shù)資料
型號(hào): VMO500-02F
英文描述: TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 500A I(D)
中文描述: 晶體管| MOSFET功率模塊|獨(dú)立| 200伏五(巴西)直| 500A(?。?/td>
文件頁數(shù): 4/4頁
文件大?。?/td> 155K
代理商: VMO500-02F
1999 IXYS All rights reserved
C3 - 21
C3
VMO 500-02F
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
10000
Z
thJC
D=0.01
D=0.02
D=0.05
D= 0.1
D= 0.2
D = 0.5
s
K/W
0
500
1000
1500
2000
2500
3000
0
3
6
9
12
15
V
GS
V
I
D
A
Limited by R
DS(on)
t = 100 ms
t = 10 ms
V
DS
V
0.0001
0.001
0.01
0.1
1
0
400
800
1200
t
p
s
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
200
400
600
800
1000
1200
T
J = 25°C
T
J = 125°C
V
A
0
5
10
15
20
25
1
10
100
1000
nF
V
SD
I
S
C
oss
V
DS
V
C
I
D = 210 A
I
G = 12 mA
V
DS = 100 V
Q
g
nC
t = 1 ms
non-repetitive
T
J = 150°C
T
C = 25°C
C
iss
C
rss
I
d
A
D = single pulse
0
D= 0.1
D= 0.2
D= 0.3
D= 0.4
D= 0.5
D= 0.7
T
C = 80°C
t = 10 s
VMO500-02F
Fig. 7 Typical turn-on gate charge characteristics
Fig. 8 Forward Bias Safe Operating Area, I
D = f (VDS)
p
Fig. 11 Drain current versus pulse width and
Fig. 12 Transient thermal resistance Z
thJC = f (tp)
duty cycle
Fig. 9 Typical capacitances C = f (V
DS), f = 1 MHz
Fig. 10 Typical forward characteristics of reverse
diode, I
S = f (VSD)
相關(guān)PDF資料
PDF描述
VMO650-01F TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 690A I(D)
VMP-2R-1000B Analog IC
VMP-2R-10B Analog IC
VMP-2S-1500B Analog IC
VMP-2S-3000B Analog IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VMO550-01F 功能描述:MOSFET 550 Amps 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VMO580-02F 功能描述:MOSFET HiperFET 200V 580A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VMO60-05F 功能描述:MOSFET 60 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VMO650-01F 功能描述:MOSFET 650 Amps 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VMO80-05P1 功能描述:MOSFET N-CH ECO-PAC2 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*