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參數(shù)資料
| 型號： | VBE100-06NO7 |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
| 中文描述： | 100 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | ECOPAC-6 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | VBE100-06NO7 |
2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBE 100-06NO7
B3
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
I
dAV
V
RRM
= 600 V
t
rr
= 35 ns
= 100 A
V
RSM
V
V
RRM
V
Typ
600
600
VBE 100-06NO7
Symbol
Conditions
Maximum Ratings
I
dAV
①
I
dAVM
I
FSM
T
C
= 85°C, module
100
100
A
A
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
600
640
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
520
555
A
A
I
2
t
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1800
1720
A
2
s
A
2
s
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1295
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
V
ISOL
-40...+150
°C
°C
°C
150
-40...+125
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque (M4)
typ.
t = 1 min
t = 1 s
3000
3600
V~
V~
M
Weight
1.5-2/14-18
Nm/lb.in.
24
g
Features
Package with DCB ceramic
base plate in low profile
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
Leads suitable for PC board soldering
Applications
Supplies for DC power equipment
Input and output rectifiers for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Low noise switching
Data according to IEC 60747 refer to a single diode unless otherwise stated
①
for resistive load at bridge output.
Dimensions in mm (1 mm = 0.0394")
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
V
R
= V
RRM
I
F
= 60 A
for power-loss calculations only
T
VJ
= 25°C
T
VJ
= T
VJM
T
VJ
= 25°C
0.1
2.5
mA
mA
V
F
V
T0
r
T
R
thJC
R
thCH
I
RM
2.04
V
1.09
4.3
V
m
per diode; DC current
per diode, DC current, typ.
0.8 K/W
0.2 K/W
I
F
= 130 A, -diF/dt = 100 A/μs
V
= 100 V, T
= 100°C
I
F
= 1 A; -di/dt = 300 A/μs; V
R
= 30 V, T
VJ
= 25°C
Max. allowable acceleration
creeping distance on surface (pin to heatsisnk)
strike distance in air (pin to heatsisnk)
6.8
A
t
rr
a
d
S
d
A
35
ns
50
m/s
2
mm
mm
11.2
9.7
Preliminary data sheet
PS16
EG 1
~
L 9
~
K10
Pin arangement see outlines
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| VBE20 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
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